AP60WN1K2J. Аналоги и основные параметры

Наименование производителя: AP60WN1K2J

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 89.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 50 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: TO251

Аналог (замена) для AP60WN1K2J

- подборⓘ MOSFET транзистора по параметрам

 

AP60WN1K2J даташит

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 ap60wn1k2j.pdf pdf_icon

AP60WN1K2J

AP60WN1K2J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description G AP60WN1K2 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the l

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 ap60wn1k2h.pdf pdf_icon

AP60WN1K2J

AP60WN1K2H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon G process technology to achieve the lowest possible on

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 ap60wn1k2in.pdf pdf_icon

AP60WN1K2J

AP60WN1K2IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.2 Fast Switching Characteristic ID3 8A G RoHS Compliant & Halogen-Free S Description AP60WN1K2 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

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 ap60wn1k5j.pdf pdf_icon

AP60WN1K2J

AP60WN1K5J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 600V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 6A G RoHS Compliant & Halogen-Free S Description G AP60WN1K5 series are from the innovated design and silicon D S TO-251(J) process technology to achieve the

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