Справочник MOSFET. AP60SL650AFH

 

AP60SL650AFH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP60SL650AFH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 56.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

AP60SL650AFH Datasheet (PDF)

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 ap60sl650afh.pdf pdf_icon

AP60SL650AFH

AP60SL650AFHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL650AF series are from Advanced Power innovated designGand silicon process technology to achieve

 3.1. Size:214K  ape
 ap60sl650afi.pdf pdf_icon

AP60SL650AFH

AP60SL650AFIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.65 Simple Drive Requirement ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL650AF series are from Advanced Power innovated designand silicon process technology to achieve th

 7.1. Size:201K  ape
 ap60sl600aj.pdf pdf_icon

AP60SL650AFH

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t

 7.2. Size:252K  ape
 ap60sl600ain.pdf pdf_icon

AP60SL650AFH

AP60SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achi

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Другие MOSFET... AP60WN2K1H , AP60WN1K5J , AP60WN1K5I , AP60WN1K5H , AP60WN1K2J , AP60WN1K2IN , AP60WN1K2H , AP60SL650AFI , STP65NF06 , AP60SL600DI , AP60SL600DH , AP60SL600AJ , AP60SL600AIN , AP60SL600AI , AP60SL600AH , AP60SL380AH , AP60SL300AFI .

History: DMN3052LSS | FHF630A

 

 
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