AP60SL600AIN Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP60SL600AIN
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 36.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 27 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO220F-NL
Аналог (замена) для AP60SL600AIN
AP60SL600AIN Datasheet (PDF)
ap60sl600ain.pdf

AP60SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achi
ap60sl600ai.pdf

AP60SL600AIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achie
ap60sl600aj.pdf

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t
ap60sl600ah.pdf

AP60SL600AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andGsilicon process technology to achi
Другие MOSFET... AP60WN1K2J , AP60WN1K2IN , AP60WN1K2H , AP60SL650AFI , AP60SL650AFH , AP60SL600DI , AP60SL600DH , AP60SL600AJ , STP65NF06 , AP60SL600AI , AP60SL600AH , AP60SL380AH , AP60SL300AFI , AP60SL280DI , AP60SL280AIN , AP60SL280AI , AP60SL150AR .
History: SI2301CDS | SSM4500GM | HSS3400A | DH60N06 | NVD5117PL | AON7532E
History: SI2301CDS | SSM4500GM | HSS3400A | DH60N06 | NVD5117PL | AON7532E



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sd427 | mje15032 equivalent | 2sc4834 | 2sd313 transistor equivalent | 2sc871 replacement | a872 transistor | b1560 | 2sa1695