Справочник MOSFET. AP60SL380AH

 

AP60SL380AH Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP60SL380AH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 78.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

AP60SL380AH Datasheet (PDF)

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ap60sl380ah.pdfpdf_icon

AP60SL380AH

AP60SL380AHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.38 Simple Drive Requirement ID3 10AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL380A series are from Advanced Power innovated design andGsilicon process technology to ac

 7.1. Size:177K  ape
ap60sl300afi.pdfpdf_icon

AP60SL380AH

AP60SL300AFIHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 0.3 Simple Drive Requirement ID3 10.5AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL300AF series are from Advanced Power innovated designand silicon process technology to achieve th

 8.1. Size:201K  ape
ap60sl600aj.pdfpdf_icon

AP60SL380AH

AP60SL600AJHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3 7AG RoHS Compliant & Halogen-FreeSDescriptionGAP60SL600A series are from Advanced Power innovated design andDSTO-251(J)silicon process t

 8.2. Size:252K  ape
ap60sl600ain.pdfpdf_icon

AP60SL380AH

AP60SL600AINHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 650VD Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID3,4 7AG RoHS Compliant & Halogen-FreeSDescriptionAP60SL600A series are from Advanced Power innovated design andsilicon process technology to achi

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History: IRF241 | NCE70T180D

 

 
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