AP60SL150AP datasheet, аналоги, основные параметры

Наименование производителя: AP60SL150AP  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 143 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 19 ns

Cossⓘ - Выходная емкость: 65 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm

Тип корпуса: TO220

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Аналог (замена) для AP60SL150AP

- подборⓘ MOSFET транзистора по параметрам

 

AP60SL150AP даташит

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AP60SL150AP

AP60SL150AP Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP60SL150A series are from Advanced Power innovated design and silicon process technology to achieve the l

 4.1. Size:209K  ape
 ap60sl150ar.pdf pdf_icon

AP60SL150AP

AP60SL150AR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3 20A G RoHS Compliant & Halogen-Free S Description AP60SL150A series are from Advanced Power innovated design and silicon process technology to achieve the l

 4.2. Size:220K  ape
 ap60sl150ai.pdf pdf_icon

AP60SL150AP

AP60SL150AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.15 Simple Drive Requirement ID3,4 20A G RoHS Compliant & Halogen-Free S Description AP60SL150A series are from Advanced Power innovated design and silicon process technology to achieve the

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 ap60sl115ai.pdf pdf_icon

AP60SL150AP

AP60SL115AI Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 0.115 Simple Drive Requirement ID3,4 28A G RoHS Compliant & Halogen-Free S Description AP60SL115A series are from Advanced Power innovated design and silicon process technology to achieve th

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