AP55T10GR - аналоги и даташиты транзистора

 

AP55T10GR - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP55T10GR
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0165 Ohm
   Тип корпуса: TO262

 Аналог (замена) для AP55T10GR

 

AP55T10GR Datasheet (PDF)

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ap55t10gr.pdfpdf_icon

AP55T10GR

AP55T10GR Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare from Advanced Power innovated design AP55T10series arefrom Advanced Power innovated

 6.1. Size:58K  ape
ap55t10gp-hf.pdfpdf_icon

AP55T10GR

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 6.2. Size:193K  ape
ap55t10gh.pdfpdf_icon

AP55T10GR

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description G AP55T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

 6.3. Size:162K  ape
ap55t10gi.pdfpdf_icon

AP55T10GR

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power inno

Другие MOSFET... AP60SL150AP , AP60SL150AI , AP60SL115AI , AP60N2R5J , AP60N2R5IN , AP60AN750IN , AP60AN750I , AP5602P , IRF3205 , AP55T10GP , AP55T10GI , AP55T10GH , AP55T06GI , AP50WN750P , AP50WN750I , AP50WN650I , AP50WN520P .

 

 
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