AP50WN1K5I - аналоги и даташиты транзистора

 

AP50WN1K5I - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP50WN1K5I
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 34 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.55 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP50WN1K5I

 

AP50WN1K5I Datasheet (PDF)

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 ap50wn1k5i.pdf pdf_icon

AP50WN1K5I

AP50WN1K5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 5.1. Size:198K  ape
 ap50wn1k5h.pdf pdf_icon

AP50WN1K5I

AP50WN1K5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon G process technology to achieve the lowest possible o

 5.2. Size:66K  ape
 ap50wn1k5p.pdf pdf_icon

AP50WN1K5I

AP50WN1K5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.55 Fast Switching Characteristic ID3 5A G RoHS Compliant & Halogen-Free S Description AP50WN1K5 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

 6.1. Size:175K  ape
 ap50wn1k0i.pdf pdf_icon

AP50WN1K5I

AP50WN1K0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test BVDSS 500V D Simple Drive Requirement RDS(ON) 1.03 Fast Switching Characteristic ID3 7A G RoHS Compliant & Halogen-Free S Description AP50WN1K0 series are from the innovated design and silicon process technology to achieve the lowest possible on-r

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP50WN750I , AP50WN650I , AP50WN520P , AP50WN520I , AP50WN270W , AP50WN270IN , AP50WN270I , AP50WN1K5P , IRFP260N , AP50WN1K5H , AP50WN1K0I , AP50WN1K0H , AP50T10GS , AP50T10GP , AP50T10GJ , AP50T10GI , AP50T10GH .

 

 
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