AP4N3R6H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP4N3R6H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 63 ns
Cossⓘ - Выходная емкость: 760 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: TO252
Аналог (замена) для AP4N3R6H
AP4N3R6H Datasheet (PDF)
ap4n3r6h.pdf

AP4N3R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP4N3R6 seriesare fromAdvanced Power innovated d
ap4n3r6p.pdf

AP4N3R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.6m Fast Switching Characteristic ID 125AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N3R6 seriesare fromAdvanced Power innova
ap4n3r2mt.pdf

AP4N3R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 3.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N3R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap4n3r2i.pdf

AP4N3R2IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.2m Fast Switching Characteristic ID 75AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are fromAdvanced Powerinnovated designAP4N3R2 series arefrom AdvancedPower innovate
Другие MOSFET... AP4P016P , AP4P016I , AP4P016H , AP4P013LES , AP4P013LEP , AP4P012LEH , AP4N4R2H , AP4N3R6P , SPP20N60C3 , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , AP4N2R6J , AP4N2R6H , AP4N2R6AMT .
History: CS6661 | NVTR4502P | SVG104R5NS6TR | 6N80G-TF3-T | 2SK1733 | VS6018BS
History: CS6661 | NVTR4502P | SVG104R5NS6TR | 6N80G-TF3-T | 2SK1733 | VS6018BS



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
transistor 2sc5200 | 2sb560 transistor | a1273 | c3421 transistor | c644 transistor | fgpf4536 datasheet | p20nm60fp datasheet | 2sc1943