AP4N2R6S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP4N2R6S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 104 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 150 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 87 nC
Время нарастания (tr): 63 ns
Выходная емкость (Cd): 720 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0026 Ohm
Тип корпуса: TO263
AP4N2R6S Datasheet (PDF)
ap4n2r6s.pdf
AP4N2R6SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated desi
ap4n2r6amt.pdf
AP4N2R6AMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap4n2r6p.pdf
AP4N2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated desi
ap4n2r6h.pdf
AP4N2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated d
ap4n2r6mt.pdf
AP4N2R6MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance ID4 150AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the
ap4n2r6j.pdf
AP4N2R6JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescription GDSTO-251(J)AP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced P
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