Справочник MOSFET. AP4N2R6MT

 

AP4N2R6MT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP4N2R6MT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 900 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: PMPAK5X6
     - подбор MOSFET транзистора по параметрам

 

AP4N2R6MT Datasheet (PDF)

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 ap4n2r6mt.pdf pdf_icon

AP4N2R6MT

AP4N2R6MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance ID4 150AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6 series are from Advanced Power innovated design andsilicon process technology to achieve the

 7.1. Size:162K  ape
 ap4n2r6amt.pdf pdf_icon

AP4N2R6MT

AP4N2R6AMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40VD Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N2R6A series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 7.2. Size:111K  ape
 ap4n2r6p.pdf pdf_icon

AP4N2R6MT

AP4N2R6PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated desi

 7.3. Size:242K  ape
 ap4n2r6h.pdf pdf_icon

AP4N2R6MT

AP4N2R6HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series arefrom Advanced Power innovated designAP4N2R6 seriesare fromAdvanced Power innovated d

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP4P012LEH , AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , RFP50N06 , AP4N2R6J , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , AP4800N2 .

History: NVTFS002N04C | SI9945BDY

 

 
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