AP4608P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP4608P
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 333.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 195 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 1730 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
Тип корпуса: TO220
- подбор MOSFET транзистора по параметрам
AP4608P Datasheet (PDF)
ap4608p.pdf

AP4608PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 1.7m Fast Switching Characteristic ID3 330AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP4608 series are from Advanced Power inno
ap4608s.pdf

AP4608SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 1.7m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP4608 series are from Advanced Power innovated des
ap4604p.pdf

AP4604PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 140AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP4604 series are from Advanced Power inno
ap4606p.pdf

AP4606PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125AG RoHS Compliant & Halogen-FreeSDescriptionAP4606 series are from Advanced Power innovated designand silicon process technology to achieve the lowes
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: TPA60R240M | IXTT360N055T2 | WMK18N50C4 | IPA60R600P6 | BSZ0703LS | PSMN7R0-100XS | KRF7401
History: TPA60R240M | IXTT360N055T2 | WMK18N50C4 | IPA60R600P6 | BSZ0703LS | PSMN7R0-100XS | KRF7401



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