Справочник MOSFET. AP4409GEP

 

AP4409GEP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP4409GEP
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 83.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 35 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 58 nC
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 750 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0082 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AP4409GEP

 

 

AP4409GEP Datasheet (PDF)

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ap4409gep.pdf

AP4409GEP
AP4409GEP

AP4409GEP-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovat

 0.1. Size:122K  ape
ap4409gep-hf.pdf

AP4409GEP
AP4409GEP

AP4409GEP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS -35VD Simple Drive Requirement RDS(ON) 8.2mG Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-FreeSDescriptionAP4409 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowe

 6.1. Size:184K  ape
ap4409gem.pdf

AP4409GEP
AP4409GEP

AP4409GEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device

 8.1. Size:182K  ape
ap4409agem.pdf

AP4409GEP
AP4409GEP

AP4409AGEMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized devic

 8.2. Size:61K  ape
ap4409agem-hf.pdf

AP4409GEP
AP4409GEP

AP4409AGEM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -35VDDD Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5AGSS RoHS CompliantSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switch

 8.3. Size:99K  ape
ap4409ageh-hf.pdf

AP4409GEP
AP4409GEP

AP4409AGEH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35VD Lower On-resistance RDS(ON) 8mG Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

 8.4. Size:55K  ape
ap4409agm-hf.pdf

AP4409GEP
AP4409GEP

AP4409AGM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDDD Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15AGS RoHS Compliant & Halogen-FreeSSO-8 SDDescriptionAP4409A series are from Advanced Power innovated design and siliconprocess technol

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