AP3R604GMT-L - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP3R604GMT-L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 29 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 615 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0036 Ohm
Тип корпуса: PMPAK5X6
Аналог (замена) для AP3R604GMT-L
AP3R604GMT-L Datasheet (PDF)
ap3r604gmt-l.pdf

AP3R604GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID5 120AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP3R604 series are from Advanced Power innovated design andsilicon process technology to achie
ap3r604gmt-hf.pdf

AP3R604GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID 120AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
ap3r604gh-hf.pdf

AP3R604GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 3.7m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, ruggedized device design, low on-S
ap3r604gh.pdf

AP3R604GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 3.7m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device de
Другие MOSFET... AP4028GEMT , AP4028EYT , AP4028EJB , AP4028EH , AP4024GEMT , AP4024EYT , AP4024EJB , AP4024EH , IRF520 , AP3R303GMT-L , AP3R303GMT , AP3P9R0I , AP3N1R7CYT , AP3P2R2CDT , AP3NR68CDT , AP2604CDT , AP3P010YT .
History: STL12P6F6 | NVR4501N | FQPF7P06 | NCEP02T11T | STL110NS3LLH7 | FXN9N50F | NCEP02T10LL
History: STL12P6F6 | NVR4501N | FQPF7P06 | NCEP02T11T | STL110NS3LLH7 | FXN9N50F | NCEP02T10LL



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
mp40 transistor | fgpf4636 datasheet | 2sc1945 | c2383 | 2sb681 | bc639 equivalent | bd138 transistor equivalent | c1096 transistor