AP3P9R0I - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP3P9R0I
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 48 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 500 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: TO220F
Аналог (замена) для AP3P9R0I
AP3P9R0I Datasheet (PDF)
ap3p9r0i.pdf

AP3P9R0IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -48AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest poss
ap3p9r0p.pdf

AP3P9R0PHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest pos
ap3p9r0h.pdf

AP3P9R0HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconGDprocess technology to achieve the lowe
ap3p9r0jb.pdf

AP3P9R0JBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -63AG RoHS Compliant & Halogen-FreeSDescriptionAP3P9R0 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest po
Другие MOSFET... AP4028EH , AP4024GEMT , AP4024EYT , AP4024EJB , AP4024EH , AP3R604GMT-L , AP3R303GMT-L , AP3R303GMT , IRFZ48N , AP3N1R7CYT , AP3P2R2CDT , AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT , AP3C030YT , AP3800YT .
History: MTP3N35 | FTK2N65F | JCS4N65CB
History: MTP3N35 | FTK2N65F | JCS4N65CB



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