AP3N018EYT Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3N018EYT
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.12 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 95 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: PMPAK3X3
Аналог (замена) для AP3N018EYT
AP3N018EYT Datasheet (PDF)
ap3n018eyt.pdf

AP3N018EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID 10.3AGS DDDescriptionDDAP3N018E series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-re
ap3n028ey.pdf

AP3N028EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS 30VD Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to ach
ap3n020p.pdf

AP3N020PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP3N020series arefrom Advanced Power innovated de
ap3n035n.pdf

AP3N035NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 35m Fast Switching Performance ID 4.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3N035 series are from Advanced Power innovated design and siliconprocess technology to achieve the
Другие MOSFET... AP3R303GMT-L , AP3R303GMT , AP3P9R0I , AP3N1R7CYT , AP3P2R2CDT , AP3NR68CDT , AP2604CDT , AP3P010YT , 60N06 , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT .
History: CSFR3N60LP
History: CSFR3N60LP



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