Справочник MOSFET. AP15TP1R0YT

 

AP15TP1R0YT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP15TP1R0YT
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 3.13 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 26 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: PMPAK3X3
 

 Аналог (замена) для AP15TP1R0YT

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP15TP1R0YT Datasheet (PDF)

 ..1. Size:159K  ape
ap15tp1r0yt.pdfpdf_icon

AP15TP1R0YT

AP15TP1R0YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -150V Small Size & Lower Profile RDS(ON) 1 RoHS Compliant & Halogen-Free ID3 -1.2AGSDDDescriptionDAP15TP1R0 series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible on

 4.1. Size:213K  ape
ap15tp1r0y.pdfpdf_icon

AP15TP1R0YT

AP15TP1R0YHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic S BVDSS -150VD Lower Gate Charge D RDS(ON) 1 Small Footprint & Low Profile Package ID3 -1AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP15TP1R0 series are from Advanced Power innovated design andsilicon process t

 5.1. Size:186K  ape
ap15tp1r0m.pdfpdf_icon

AP15TP1R0YT

AP15TP1R0MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -150VDDD Lower Gate Charge RDS(ON) 1D Fast Switching Characteristic ID -1.1AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP15TP1R0 series are from Advanced Power innovateddesign and silicon process technol

 9.1. Size:188K  ape
ap15tn1r5n.pdfpdf_icon

AP15TP1R0YT

AP15TN1R5NHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 150VD Fast Switching Characteristic RDS(ON) 1.5 Low Gate Charge ID 0.6AS RoHS Compliant & Halogen-FreeSOT-23SGDescription DAP15TN1R5 series are from Advanced Power innovated designand silicon process technology to achieve

Другие MOSFET... AP3P010YT , AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , 2N7002 , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT .

History: 14N50G-TF1-T | 12N80G-T47-T | 2SK4059MFV | SQ3456BEV | 2SK4073LS

 

 
Back to Top

 


 
.