Справочник MOSFET. AP3N1R8MT

 

AP3N1R8MT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP3N1R8MT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 38 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 820 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00189 Ohm
   Тип корпуса: PMPAK5X6

 Аналог (замена) для AP3N1R8MT

 

 

AP3N1R8MT Datasheet (PDF)

 ..1. Size:68K  1
 ap3n1r8mt.pdf

AP3N1R8MT AP3N1R8MT

AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 ..2. Size:163K  ape
 ap3n1r8mt.pdf

AP3N1R8MT AP3N1R8MT

AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 0.1. Size:319K  ape
 ap3n1r8mt-l.pdf

AP3N1R8MT AP3N1R8MT

AP3N1R8MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andsilicon process technology to achieve th

 7.1. Size:205K  ape
 ap3n1r8p.pdf

AP3N1R8MT AP3N1R8MT

AP3N1R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N1R8 seriesare fromAdvanced Power innovated

 8.1. Size:63K  ape
 ap3n1r7cyt.pdf

AP3N1R8MT AP3N1R8MT

AP3N1R7CYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-FreeGSDDDescriptionDDAP3N1R7C series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resi

 8.2. Size:163K  ape
 ap3n1r0mt.pdf

AP3N1R8MT AP3N1R8MT

AP3N1R0MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 1.05m Ultra Low On-resistance ID4 245AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N1R0 series are from Advanced Power innovated design andsilicon process technology to achieve the

 8.3. Size:163K  ape
 ap3n1r7mt.pdf

AP3N1R8MT AP3N1R8MT

AP3N1R7MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 1.7m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N1R7 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top