AP3A010AMT Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3A010AMT
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.57 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 225 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0104 Ohm
Тип корпуса: PMPAK5X6
Аналог (замена) для AP3A010AMT
AP3A010AMT Datasheet (PDF)
ap3a010amt.pdf

AP3A010AMTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.4m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010A series are from Advanced Power innovateddesign and silicon process technology to achieve th
ap3a010am.pdf

AP3A010AMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2D1 Low On-resistance RDS(ON) 10.4mD1 Fast Switching Performance ID 10.8AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP3A010A series are from Advanced Power innovated designD2D1and silicon
ap3a010mt.pdf

AP3A010MTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.5m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010 series are from Advanced Power innovateddesign and silicon process technology to achieve the
ap3a020y.pdf

AP3A020YHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2 Low Gate Charge RDS(ON) 20mD1D1G2 Fast Switching Performance ID3 6.5AS2 RoHS Compliant & Halogen-FreeG1S12928-8DescriptionAP3A020 series are from Advanced Power innovated designD2D1and silicon pro
Другие MOSFET... AP3N2R2MT , AP3N1R8MT-L , AP3N1R8MT , AP3N1R7MT , AP3N1R0MT , AP3D5R0MT , AP3C023AMT , AP3A010MT , IRFP260N , AP3700MT , AP2C016LMT , AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , AP10TN5R5LMT , AP10TN028MT .
History: SVG15670NSA | ZXM62N03G | IXTK17N120L | RFH25P10 | OSG60R074JT3ZF | QM2410J | P0460ED
History: SVG15670NSA | ZXM62N03G | IXTK17N120L | RFH25P10 | OSG60R074JT3ZF | QM2410J | P0460ED



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