AP3P7R0ES - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP3P7R0ES
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 59.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 140 ns
Cossⓘ - Выходная емкость: 590 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: TO263
Аналог (замена) для AP3P7R0ES
AP3P7R0ES Datasheet (PDF)
ap3p7r0es.pdf
AP3P7R0ESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
ap3p7r0eh.pdf
AP3P7R0EHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
ap3p7r0emt.pdf
AP3P7R0EMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75AG RoHS Compliant & Halogen-Free HBM ESD 2KVSDDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDsilicon process technolo
ap3p7r0em.pdf
AP3P7R0EMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Ultra Low On-resistance ID3 -15.5A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDDsilicon process technology t
Другие MOSFET... AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , IRFB3607 , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS , AP30T10GI .
History: SDF340 | SM3113NSUC | SIR422DP-T1-GE3
History: SDF340 | SM3113NSUC | SIR422DP-T1-GE3
Список транзисторов
Обновления
MOSFET: AGM615MNA | AGM615MN | AGM615D | AGM614MNA | AGM614MN | AGM614MBP-M1 | AGM614MBP | AGM614D | AGM614A-G | AGM612S | AGM612MNA | AGM612MN | AGM612MBQ | AGM612MBP | AGM612D | AGM612AP
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