AP14SL50H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP14SL50H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 89.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 45 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO252
Аналог (замена) для AP14SL50H
AP14SL50H Datasheet (PDF)
ap14sl50h.pdf

AP14SL50H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 550VD Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID 13AG RoHS Compliant & Halogen-FreeSDescriptionAP14SL50 series are from Advanced Power innovated design andGsilicon process technology to achi
ap14sl50w.pdf

AP14SL50W-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test VDS @ Tj,max. 550VD Fast Switching Characteristic RDS(ON) 0.28 Simple Drive Requirement ID 13AG RoHS Compliant & Halogen-FreeSDescriptionAP14SL50 series are from Advanced Power innovated design andsilicon process technology to achieve
ap14sl50i.pdf

AP14SL50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic VDS @ Tj,max. 550VD Simple Drive Requirement RDS(ON) 0.28 RoHS Compliant & Halogen-Free ID 13AGSDescriptionAP14SL50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-
ap14s50s-hf.pdf

AP14S50S-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 500VD Simple Drive Requirement RDS(ON) 0.27 RoHS Compliant & Halogen-Free ID 13.5AGSDescriptionAP14S50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-GD
Другие MOSFET... AP1A003P , AP18P10AGJ , AP18P10AGH , AP16T10GH , AP15T15GH , AP15P10GI , AP14SL50W , AP14SL50I , AO3401 , AP13N50R , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J , AP10TN135H .
History: JCS15N65SEI | 2SK2838K | PSMN013-100BS
History: JCS15N65SEI | 2SK2838K | PSMN013-100BS



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