AP13N50R - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP13N50R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 180 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
Тип корпуса: TO262
Аналог (замена) для AP13N50R
AP13N50R Datasheet (PDF)
ap13n50r.pdf
AP13N50R-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAP13N50 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap13n50r-hf.pdf
AP13N50R-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedize
ap13n50w.pdf
AP13N50WRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design, lowon-resistance
ap13n50i-hf.pdf
AP13N50I-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.52 Fast Switching Characteristic ID 14AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedize
Другие MOSFET... AP18P10AGJ , AP18P10AGH , AP16T10GH , AP15T15GH , AP15P10GI , AP14SL50W , AP14SL50I , AP14SL50H , 75N75 , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J , AP10TN135H , AP10TN040P .
History: SIR802DP-T1-GE3 | 2SK1819-01MR | SE6003C | 2SK1569 | 2SJ549L | F10N65 | SI3477DV
History: SIR802DP-T1-GE3 | 2SK1819-01MR | SE6003C | 2SK1569 | 2SJ549L | F10N65 | SI3477DV
Список транзисторов
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