AP10TN135P - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP10TN135P
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 20.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 27 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
Тип корпуса: TO220
Аналог (замена) для AP10TN135P
AP10TN135P Datasheet (PDF)
ap10tn135p.pdf

AP10TN135PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap10tn135h.pdf

AP10TN135HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN135 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology
ap10tn135m.pdf

AP10TN135MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDD Fast Switching Characteristic D RDS(ON) 135mD Low Gate Charge ID 3AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP10TN135 series are from Advanced Power innovated designand silicon process technology t
ap10tn135j.pdf

AP10TN135JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andGDSsilicon process technology to achieve
Другие MOSFET... AP15P10GI , AP14SL50W , AP14SL50I , AP14SL50H , AP13N50R , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , NCEP15T14 , AP10TN135JB , AP10TN135J , AP10TN135H , AP10TN040P , AP10TN040H , AP10TN003S , AP10TN003R , AP10TN003P .
History: 2SK2084STL-E | MTP15N05LFI | SL3134K | INJ0303AC1 | 2SK1440 | MPSW65M065 | IRFP254N
History: 2SK2084STL-E | MTP15N05LFI | SL3134K | INJ0303AC1 | 2SK1440 | MPSW65M065 | IRFP254N



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