Справочник MOSFET. AP10TN135J

 

AP10TN135J Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10TN135J
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 20.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

AP10TN135J Datasheet (PDF)

 ..1. Size:166K  ape
 ap10tn135j.pdf pdf_icon

AP10TN135J

AP10TN135JHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andGDSsilicon process technology to achieve

 0.1. Size:142K  ape
 ap10tn135jb.pdf pdf_icon

AP10TN135J

AP10TN135JBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionAP10TN135 series are from Advanced Power innovated design andsilicon process technology to achieve the low

 5.1. Size:201K  ape
 ap10tn135h.pdf pdf_icon

AP10TN135J

AP10TN135HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN135 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 5.2. Size:222K  ape
 ap10tn135m.pdf pdf_icon

AP10TN135J

AP10TN135MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDD Fast Switching Characteristic D RDS(ON) 135mD Low Gate Charge ID 3AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP10TN135 series are from Advanced Power innovated designand silicon process technology t

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STF2N95K5 | MC11N005 | AM20P10-250D | JCS5N50CT | NCEP026N10F | NVMFS5C628N | SI7913DN

 

 
Back to Top

 


 
.