Справочник MOSFET. AP10N4R5S

 

AP10N4R5S Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10N4R5S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 138.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 100 ns
   Cossⓘ - Выходная емкость: 1175 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для AP10N4R5S

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP10N4R5S Datasheet (PDF)

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AP10N4R5S

AP10N4R5SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP10N4R5 series are from AdvancedPower innovated desig

 6.1. Size:218K  ape
ap10n4r5i.pdfpdf_icon

AP10N4R5S

AP10N4R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 70AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP10N4R5 series are from AdvancedPower innovate

 6.2. Size:205K  ape
ap10n4r5p.pdfpdf_icon

AP10N4R5S

AP10N4R5PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP10N4R5 series are from AdvancedPower innovated desig

 9.1. Size:189K  ape
ap10n70p.pdfpdf_icon

AP10N4R5S

AP10N70R/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applicati

Другие MOSFET... AP10TN003P , AP10TN003I , AP10P230H , AP10P10GJ , AP10N9R0R , AP10N9R0I , AP10N7R5H , AP10N6R0S , 5N50 , AP10N4R5P , AP10N4R5I , AP10N012P , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH .

History: YJD60N04A | FQI1P50TU | AP13N50R

 

 
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