AP10N4R5S - Даташиты. Аналоги. Основные параметры

AP10N4R5S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N4R5 series are from AdvancedPower innovated desig

AP10N4R5I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 70A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N4R5 series are from AdvancedPower innovate

AP10N4R5P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N4R5 series are from AdvancedPower innovated desig

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applicati

AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90 265VAC off-line AC/DC converter applications. TO-263 type provid

AP10N012IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applica

AP10N60W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 10A G S Description AP10N60 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. The TO-3P type

AP10N012I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desig

AP10N6R0S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 6m Lower On-resistance ID 95A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N6R0 series are from AdvancedPower innovated design an

AP10N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

AP10N012MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43A G RoHS Compliant & Halogen-Free D S D D Description D AP10N012 series are from Advanced Power innovated design and silicon process technology to achieve the lo

AP10N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D TO-22

AP10N7R5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 7.5m Fast Switching Characteristic ID 78A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N7R5 series are from AdvancedPower innovate

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applic

AP10N012P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated design

AP10N012H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48A G G RoHS Compliant & Halogen-Free S S Description G AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi

AP10N70W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. The TO-3P type p

AP10N9R0R Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 8.9m Fast Switching Characteristic ID 70A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N9R0 series are from AdvancedPower innovate

AP10N9R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 8.9m Fast Switching Characteristic ID 44A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from Advanced Powerinnovated design AP10N9R0 series are from AdvancedPower innovate

AIIP ER AP10N10K DATA SHEET N-Channel Power MOSFET D B T 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T R HS c mpliant & Hal gen-Free Description AP10N10K series are from Advanced Power innovated design and s T0-252 silicon process technology to achieve the lowest possible on resistance and fast switchi

AP10N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP10N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R

AP10N06S 60V N-Channel Enhancement Mode MOSFET Description The AP10N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10 A DS D R

AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R

AP10N06D 60V N-Channel Enhancement Mode MOSFET Description The AP10N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =13A DS D R

AP10N04MSI 40V N-Channel Enhancement Mode MOSFET Description The AP10N04MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =10A DS D R

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS D R

AP10N06MSI 60V N-Channel Enhancement Mode MOSFET Description The AP10N06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R

AP10N04S 40V N-Channel Enhancement Mode MOSFET Description The AP10N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =10 A DS D R