AP09N20BGH - аналоги и даташиты транзистора

 

AP09N20BGH - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP09N20BGH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP09N20BGH

 

AP09N20BGH Datasheet (PDF)

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 ap09n20bgh.pdf pdf_icon

AP09N20BGH

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and G silicon process technology to achieve th

 0.1. Size:93K  ape
 ap09n20bgh-hf.pdf pdf_icon

AP09N20BGH

AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of f

 5.1. Size:58K  ape
 ap09n20bgp-hf.pdf pdf_icon

AP09N20BGH

AP09N20BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G T

 5.2. Size:55K  ape
 ap09n20bgs-hf.pdf pdf_icon

AP09N20BGH

AP09N20BGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the l

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History: FBM80N70P | MRF175GV | FBM85N80B | FCAB21520L1

 

 
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