AP09N20BGH - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP09N20BGH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 90 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
Тип корпуса: TO252
Аналог (замена) для AP09N20BGH
AP09N20BGH Datasheet (PDF)
ap09n20bgh.pdf

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated design andGsilicon process technology to achieve th
ap09n20bgh-hf.pdf

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f
ap09n20bgp-hf.pdf

AP09N20BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GT
ap09n20bgs-hf.pdf

AP09N20BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated designand silicon process technology to achieve the l
Другие MOSFET... AP10N4R5P , AP10N4R5I , AP10N012P , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , IRF540N , AP0603GH , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB .
History: 2SK363 | WMN15N65C4 | CEU12N10L | IRFB3607 | 2N60L-TF1-T | INK0103AM1 | 2SK3078
History: 2SK363 | WMN15N65C4 | CEU12N10L | IRFB3607 | 2N60L-TF1-T | INK0103AM1 | 2SK3078



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