AP05N50EH datasheet, аналоги, основные параметры
Наименование производителя: AP05N50EH 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 73.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 75 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
Тип корпуса: TO252
Аналог (замена) для AP05N50EH
- подборⓘ MOSFET транзистора по параметрам
AP05N50EH даташит
ap05n50eh.pdf
AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo
ap05n50eh-hf ap05n50ej-hf.pdf
AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the to
ap05n50ei-hf.pdf
AP05N50EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power sys
ap05n50ej.pdf
AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo
Другие IGBT... AP10N012IN, AP10N012I, AP10N012H, AP10C325Y, AP09T10GH, AP09N20BGH, AP0603GH, AP05N50EJ, IRFZ44, AP05N20GJ, AP05N20GI, AP05N20GH, AP04N70BS-H, AP02N90JB, AP02N90J, AP02N90H, AP01L60T-H
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Список транзисторов
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