AP05N50EH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP05N50EH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 73.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 75 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
Тип корпуса: TO252
Аналог (замена) для AP05N50EH
AP05N50EH Datasheet (PDF)
ap05n50eh.pdf

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo
ap05n50eh-hf ap05n50ej-hf.pdf

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SThe AP05N50 provide high blocking voltage to overcome voltage surgeand sag in the to
ap05n50ei-hf.pdf

AP05N50EI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSDescriptionThe AP05N50 provide high blocking voltage to overcome voltage surgeGDand sag in the toughest power sys
ap05n50ej.pdf

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo
Другие MOSFET... AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , IRFZ44 , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H .
History: DMG10N60SCT | DMN4034SSS | PK615BM6 | APT94N65B2C3G | 19N20 | NCE65NF099
History: DMG10N60SCT | DMN4034SSS | PK615BM6 | APT94N65B2C3G | 19N20 | NCE65NF099



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