AP05N20GJ - аналоги и даташиты транзистора

 

AP05N20GJ - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP05N20GJ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8.5 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP05N20GJ

 

AP05N20GJ Datasheet (PDF)

 ..1. Size:164K  ape
 ap05n20gj.pdf pdf_icon

AP05N20GJ

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

 6.1. Size:61K  ape
 ap05n20gh j-hf.pdf pdf_icon

AP05N20GJ

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

 6.2. Size:171K  ape
 ap05n20gi.pdf pdf_icon

AP05N20GJ

AP05N20GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8A G RoHS Compliant & Halogen-Free S Description AP05N20 series are from Advanced Power innovated design and silicon process technology to achieve the low

 6.3. Size:196K  ape
 ap05n20gh.pdf pdf_icon

AP05N20GJ

AP05N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-Free G S Description G Advanced Power MOSFETs from APEC provide the designer with the D S TO-252(H) best combination of f

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , IRF640 , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF .

 

 
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