AP05N20GJ Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP05N20GJ
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8.5 ns
Cossⓘ - Выходная емкость: 70 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO251
Аналог (замена) для AP05N20GJ
AP05N20GJ Datasheet (PDF)
ap05n20gj.pdf

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
ap05n20gh j-hf.pdf

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
ap05n20gi.pdf

AP05N20GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 200V Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID3 5.8AG RoHS Compliant & Halogen-FreeSDescriptionAP05N20 series are from Advanced Power innovated design andsilicon process technology to achieve the low
ap05n20gh.pdf

AP05N20GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 600m Fast Switching Characteristics ID 5.8A RoHS Compliant & Halogen-FreeGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer with the DSTO-252(H)best combination of f
Другие MOSFET... AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , IRFP460 , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF .
History: 2SK1904 | SM3119NAU | FTA06N60C
History: 2SK1904 | SM3119NAU | FTA06N60C



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