AP02N90JB - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP02N90JB
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 40 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7.2 Ohm
Тип корпуса: TO251S
Аналог (замена) для AP02N90JB
AP02N90JB Datasheet (PDF)
ap02n90jb.pdf

AP02N90JBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 900VD Fast Switching Characteristic RDS(ON) 7.2 Simple Drive Requirement ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap02n90h-hf ap02n90j-hf.pdf

AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, D
ap02n90j.pdf

AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
ap02n90h.pdf

AP02N90H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900VD Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-FreeGSDescriptionAP02N90 series are from Advanced Power innovated design and siliconGprocess technology to achieve the
Другие MOSFET... AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , IRF630 , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , AP01L60J-H , AP01L60T-HF .
History: MSD4N40 | STH9NA60FI | 40N15G-TF2-T | SQJA02EP | 6N50 | BLP04N10-B | WMP15N65F2
History: MSD4N40 | STH9NA60FI | 40N15G-TF2-T | SQJA02EP | 6N50 | BLP04N10-B | WMP15N65F2



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