AP02N90I-HF - аналоги и даташиты транзистора

 

AP02N90I-HF - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP02N90I-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 40 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 7.2 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP02N90I-HF

 

AP02N90I-HF Datasheet (PDF)

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 ap02n90i-hf.pdf pdf_icon

AP02N90I-HF

AP02N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS Compliant & Halogen-Free S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device

 6.1. Size:39K  ape
 ap02n90i.pdf pdf_icon

AP02N90I-HF

AP02N90I Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS compliant S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device is suited for s

 7.1. Size:197K  ape
 ap02n90h.pdf pdf_icon

AP02N90I-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

 7.2. Size:57K  ape
 ap02n90p-hf.pdf pdf_icon

AP02N90I-HF

AP02N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G D TO-220 D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF , AP02N70EJ-HF , STP75NF75 , AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF , AP04N70BI-HF .

History: AP01L60J-H | R6006JNX | IRFD420

 

 
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