AP02N90I-HF datasheet, аналоги, основные параметры

Наименование производителя: AP02N90I-HF  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 34.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 40 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 7.2 Ohm

Тип корпуса: TO220F

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Аналог (замена) для AP02N90I-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP02N90I-HF даташит

 ..1. Size:92K  ape
 ap02n90i-hf.pdf pdf_icon

AP02N90I-HF

AP02N90I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS Compliant & Halogen-Free S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device

 6.1. Size:39K  ape
 ap02n90i.pdf pdf_icon

AP02N90I-HF

AP02N90I Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 900V Isolation Full Package RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A G RoHS compliant S Description The TO-220CFM package is universally preferred for all commercial- industrial applications. The device is suited for s

 7.1. Size:197K  ape
 ap02n90h.pdf pdf_icon

AP02N90I-HF

AP02N90H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V D Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G S Description AP02N90 series are from Advanced Power innovated design and silicon G process technology to achieve the

 7.2. Size:57K  ape
 ap02n90p-hf.pdf pdf_icon

AP02N90I-HF

AP02N90P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 900V Low On-resistance RDS(ON) 7.2 Fast Switching Characteristics ID 1.9A RoHS Compliant & Halogen-Free G D TO-220 D S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

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