AP6679GS - описание и поиск аналогов

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 ap6679gs.pdf 

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi

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 ap6679gs p-a-hf.pdf 

AP6679GS/P-A-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

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 ap6679gp-a ap6679gs-a.pdf 

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-

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 ap6679gp-hf ap6679gs-hf.pdf 

AP6679GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r

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 ap6679gi-hf.pdf 

AP6679GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-220CFM(I) ruggedized dev

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 ap6679gp.pdf 

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi

 7.3. Size:215K  ape
 ap6679gh ap6679gj.pdf 

AP6679GH/J RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl

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 ap6679gm-hf.pdf 

AP6679GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 9m D Fast Switching Characteristic ID -14A G RoHS Compliant S S SO-8 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ru

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 ap6679gi.pdf 

AP6679GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D TO-220CFM(I) S ruggedized device design, low on-r

 7.6. Size:216K  ape
 ap6679gh-hf ap6679gj-hf.pdf 

AP6679GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suit

 7.7. Size:149K  ape
 ap6679gr.pdf 

AP6679GR RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 7.8. Size:411K  cn vbsemi
 ap6679gh.pdf 

AP6679GH www.VBsemi.com P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive2002/95/EC RDS(on) ( ) VDS (V) ID (A)a Available -60 0.009 at VGS = - 10 V RoHS* - 30 COMPLIANT -58 0.012 at VGS = - 4.5 V S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VG