AP2346GN-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP2346GN-HF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.38 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 6.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 22 nC
Время нарастания (tr): 11 ns
Выходная емкость (Cd): 175 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.021 Ohm
Тип корпуса: SOT23
Аналог (замена) для AP2346GN-HF
AP2346GN-HF Datasheet (PDF)
ap2346gn-hf.pdf
AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2346gn.pdf
AP2346GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 21m Fast Switching Performance ID 6.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2346 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2344gen-hf.pdf
AP2344GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 23m Fast Switching Performance ID 6.2AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconGprocess technology to achiev
ap2342gk-hf.pdf
AP2342GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 2S Fast Switching Characteristic ID 590mAD RoHS Compliant & Halogen-FreeSOT-223GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast swit
ap2344gn-hf.pdf
AP2344GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2344gn.pdf
AP2344GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 1.8V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 22m Fast Switching Performance ID 6.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2344 series are from Advanced Power innovated design and siliconprocess technology to achieve th
ap2340gn-hf.pdf
AP2340GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 30VD Lower Gate Charge RDS(ON) 80m Small Footprint & Low Profile Package ID 3.4AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniquesto achieve the lowest
ap2348gn-hf.pdf
AP2348GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Small Package Outline RDS(ON) 300m Surface Mount Device ID 1.5AG RoHS Compliant & Halogen-FreeSDDescriptionAP2348 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
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