AP3R604GH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3R604GH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 600 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
Тип корпуса: TO252
Аналог (замена) для AP3R604GH
AP3R604GH Datasheet (PDF)
ap3r604gh.pdf

AP3R604GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 3.7m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device de
ap3r604gh-hf.pdf

AP3R604GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 3.7m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, ruggedized device design, low on-S
ap3r604gmt-hf.pdf

AP3R604GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID 120AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
ap3r604gmt-l.pdf

AP3R604GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID5 120AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP3R604 series are from Advanced Power innovated design andsilicon process technology to achie
Другие MOSFET... AP2764I-A-HF , AP2R803GH , AP2R803GM-HF , AP2R803GS-HF , AP30P10GS-HF , AP3310GJ , AP3801GM-HF , AP3989I-HF , 12N60 , AP4002H-HF , AP4002J-HF , AP4002T , AP4036AGM-HF , AP40N03GH-HF , AP40N03GJ-HF , AP40N03GP-HF , AP40P03GH-HF .
History: LPSC2301 | CTD06N017 | RU1HL8L | NVMFS5C646NL | SL2P03F | HM18N40F
History: LPSC2301 | CTD06N017 | RU1HL8L | NVMFS5C646NL | SL2P03F | HM18N40F



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