AP3R604GH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3R604GH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 600 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
AP3R604GH Datasheet (PDF)
ap3r604gh.pdf

AP3R604GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 3.7m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device de
ap3r604gh-hf.pdf

AP3R604GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 3.7m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, ruggedized device design, low on-S
ap3r604gmt-hf.pdf

AP3R604GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID 120AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
ap3r604gmt-l.pdf

AP3R604GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 3.6m Low On-resistance ID5 120AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP3R604 series are from Advanced Power innovated design andsilicon process technology to achie
Другие MOSFET... AP2764I-A-HF , AP2R803GH , AP2R803GM-HF , AP2R803GS-HF , AP30P10GS-HF , AP3310GJ , AP3801GM-HF , AP3989I-HF , IRF1010E , AP4002H-HF , AP4002J-HF , AP4002T , AP4036AGM-HF , AP40N03GH-HF , AP40N03GJ-HF , AP40N03GP-HF , AP40P03GH-HF .
History: VBZMB4N65 | RU1HL8L | IXTH10N60 | TSM4946DCS | UPA1770 | KRF7703 | APT5030BN
History: VBZMB4N65 | RU1HL8L | IXTH10N60 | TSM4946DCS | UPA1770 | KRF7703 | APT5030BN



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
ge10001 | irf830 | irfp450 | mj21193 | s9014 transistor | bc547 transistor datasheet | c945 datasheet | irfp260