AP40N03GH-HF datasheet, аналоги, основные параметры

Наименование производителя: AP40N03GH-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 380 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm

Тип корпуса: TO252

Аналог (замена) для AP40N03GH-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP40N03GH-HF даташит

 ..1. Size:97K  ape
 ap40n03gh-hf ap40n03gj-hf.pdf pdf_icon

AP40N03GH-HF

AP40N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V D Simple Drive Requirement RDS(ON) 21m Fast Switching Characteristic ID 36A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S

 6.1. Size:94K  ape
 ap40n03gp-hf.pdf pdf_icon

AP40N03GH-HF

AP40N03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-Free G TO-220 D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 6.2. Size:95K  ape
 ap40n03gp.pdf pdf_icon

AP40N03GH-HF

AP40N03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D TO-220 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-r

 6.3. Size:126K  ape
 ap40n03gs.pdf pdf_icon

AP40N03GH-HF

AP40N03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D S TO-263 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res

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