Справочник MOSFET. AP40T03GI-HF

 

AP40T03GI-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP40T03GI-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9 nC
   trⓘ - Время нарастания: 56 ns
   Cossⓘ - Выходная емкость: 160 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AP40T03GI-HF

 

 

AP40T03GI-HF Datasheet (PDF)

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 ap40t03gi-hf.pdf

AP40T03GI-HF AP40T03GI-HF

AP40T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de

 5.1. Size:97K  ape
 ap40t03gi.pdf

AP40T03GI-HF AP40T03GI-HF

AP40T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDD Low Gate Charge BVDSS 30V Single Drive Requirement RDS(ON) 25m Lower On-resistance ID 28AGGSSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and

 6.1. Size:214K  ape
 ap40t03gj.pdf

AP40T03GI-HF AP40T03GI-HF

AP40T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDTO-252(H)Sdesigner with the best combination of fast switching,ruggedized device design, low on-resista

 6.2. Size:62K  ape
 ap40t03gp.pdf

AP40T03GI-HF AP40T03GI-HF

AP40T03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28AGG RoHS CompliantSSDescriptionThe Advanced Power MOSFETs from APEC provide theThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combi

 6.3. Size:97K  ape
 ap40t03gh-hf ap40t03gj-hf.pdf

AP40T03GI-HF AP40T03GI-HF

AP40T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching Characteristic ID 28AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,TO-

 6.4. Size:97K  ape
 ap40t03gp-hf ap40t03gs-hf.pdf

AP40T03GI-HF AP40T03GI-HF

AP40T03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching Characteristic ID 28AG RoHS Compliant & Halogen-FreeSDescriptionThe Advanced Power MOSFETs APEC provide theAdvanced Power MOSFETs fromfrom APEC provide theGdesigner wit

 6.5. Size:171K  ape
 ap40t03gh.pdf

AP40T03GI-HF AP40T03GI-HF

AP40T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 25m Fast Switching ID 28AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDTO-252(H)Sdesigner with the best combination of fast switching,ruggedized device design, low on-resista

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