Справочник MOSFET. AP9971AGS-HF

 

AP9971AGS-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9971AGS-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 22 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
   Тип корпуса: TO263

 Аналог (замена) для AP9971AGS-HF

 

 

AP9971AGS-HF Datasheet (PDF)

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 ap9971ags-hf.pdf

AP9971AGS-HF AP9971AGS-HF

AP9971AGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggediz

 5.1. Size:197K  ape
 ap9971agp ap9971ags.pdf

AP9971AGS-HF AP9971AGS-HF

AP9971AGS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GTO-220(P)Druggedized device design

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 ap9971agd.pdf

AP9971AGS-HF AP9971AGS-HF

AP9971AGDRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD2 Low On-resistance BVDSS 60VD2D1 Fast Switching Speed RDS(ON) 50mD1 PDIP-8 Package ID 5AG2S2PDIP-8G1S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

 6.2. Size:96K  ape
 ap9971agh-hf ap9971agj-hf.pdf

AP9971AGS-HF AP9971AGS-HF

AP9971AGH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AG Halogen Free & RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDSbest combination of fast switchin

 6.3. Size:95K  ape
 ap9971agm-hf.pdf

AP9971AGS-HF AP9971AGS-HF

AP9971AGM-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60VD2D2D1 Single Drive Requirement RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide the designer withD2D1the best combinat

 6.4. Size:231K  ape
 ap9971agh ap9971agj.pdf

AP9971AGS-HF AP9971AGS-HF

AP9971AGH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 36m Fast Switching Characteristic ID 22AGSDescriptionGAdvanced Power MOSFETs from APEC provide the designer withDS TO-252(H)the best combination of fast switching, ruggedized device desig

 6.5. Size:166K  ape
 ap9971agm.pdf

AP9971AGS-HF AP9971AGS-HF

AP9971AGM-HFHalogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-resistance BVDSS 60V D2D2D1 Simple Drive Requirement RDS(ON) 50mD1 Surface Mount Package ID 5AG2S2 RoHS Compliant & Halogen-Free G1S1SO-8DescriptionAP9971A series are from A

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