Справочник MOSFET. AP70T03AH

 

AP70T03AH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP70T03AH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 53 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 105 ns
   Cossⓘ - Выходная емкость: 245 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP70T03AH

 

 

AP70T03AH Datasheet (PDF)

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ap70t03ah ap70t03aj.pdf

AP70T03AH AP70T03AH

AP70T03AH/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low o

 6.1. Size:72K  ape
ap70t03as ap70t03ap.pdf

AP70T03AH AP70T03AH

AP70T03AS/PAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A GSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-263(S)designer with the best combination of fast switching,ruggedized dev

 7.1. Size:121K  ape
ap70t03gi.pdf

AP70T03AH AP70T03AH

AP70T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30VD Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance

 7.2. Size:98K  ape
ap70t03gh-hf ap70t03gj-hf.pdf

AP70T03AH AP70T03AH

AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device des

 7.3. Size:98K  ape
ap70t03gh.pdf

AP70T03AH AP70T03AH

AP70T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDS TO-252(H)designer with the best combination of fast switching,ruggedized device design, low on-resistanc

 7.4. Size:98K  ape
ap70t03gp ap70t03gs.pdf

AP70T03AH AP70T03AH

AP70T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching Speed ID 60AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-263(S)designer with the best combination of fast switching,ruggedized device design, low on-re

 7.5. Size:175K  ape
ap70t03gjb.pdf

AP70T03AH AP70T03AH

AP70T03GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60AG RoHS Compliant & Halogen-FreeSDescriptionAP70T03 series are from Advanced Power innovated designand silicon process technology to achieve the lowest pos

 7.6. Size:202K  ape
ap70t03gj.pdf

AP70T03AH AP70T03AH

AP70T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60AG RoHS CompliantSDescriptionAP70T03 series are from Advanced Power innovated design and siliconGDS TO-252(H)process technology to achieve the lowest possible on-

 7.7. Size:843K  cn vbsemi
ap70t03gh.pdf

AP70T03AH AP70T03AH

AP70T03GHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOL

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