PD - 91813SMPS MOSFET IRFIB6N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75W 5.5Al High speed power switchingl High Voltage Isolation = 2.5KVRMSBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized

PD - 94838SMPS MOSFETIRFIB6N60APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 5.5Al High speed power switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG

IRFIB6N60A, SiHFIB6N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 49COMPLIANTRuggednessQgs (nC) 13 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfi

iscN-Channel MOSFET Transistor IRFIB6N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

PD - 94805SMPS MOSFETIRFIB7N50APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt RuggednessG D S Ful

PD - 94856IRFIBC20GPbF Lead-Free11/20/03Document Number: 91178 www.vishay.com1IRFIBC20GPbFDocument Number: 91178 www.vishay.com2IRFIBC20GPbFDocument Number: 91178 www.vishay.com3IRFIBC20GPbFDocument Number: 91178 www.vishay.com4IRFIBC20GPbFDocument Number: 91178 www.vishay.com5IRFIBC20GPbFDocument Number: 91178 www.vishay.com6IRFIBC20GPbFTO-2

PD - 94522SMPS MOSFETIRFIB5N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. IDl Switch Mode Power Supply (SMPS)500V 0.67 73ns 4.7Al Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dtRuggednessTO-220 Full-Pakl Fully Chara

PD - 94874IRFIBF30GPbF Lead-Free12/9/03Document Number: 91186 www.vishay.com1IRFIBF30GPbFDocument Number: 91186 www.vishay.com2IRFIBF30GPbFDocument Number: 91186 www.vishay.com3IRFIBF30GPbFDocument Number: 91186 www.vishay.com4IRFIBF30GPbFDocument Number: 91186 www.vishay.com5IRFIBF30GPbFDocument Number: 91186 www.vishay.com6IRFIBF30GPbFTO-22

PD - 94857IRFIBC40GPbF Lead-Free11/20/03Document Number: 91182 www.vishay.com1IRFIBC40GPbFDocument Number: 91182 www.vishay.com2IRFIBC40GPbFDocument Number: 91182 www.vishay.com3IRFIBC40GPbFDocument Number: 91182 www.vishay.com4IRFIBC40GPbFDocument Number: 91182 www.vishay.com5IRFIBC40GPbFDocument Number: 91182 www.vishay.com6IRFIBC40GPbFTO-

PD - 94860IRFIBC40GLCPbF Lead-Free12/03/03Document Number: 91181 www.vishay.com1IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com2IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com3IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com4IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com5IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com6IRFIBC

PD - 95750IRFIB7N50LPbFSMPS MOSFETHEXFET Power MOSFETApplicationsTrr typ. Zero Voltage Switching SMPS VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 320m 85ns 6.8A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

PD - 94927AIRFB41N15DPbFIRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl Lead-FreeVDSS RDS(on) max IDBenefits150V 0.045 41Al Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avala

PD-91816BSMPS MOSFETIRFIB5N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacita

PD - 95611IRFIBC30GPbF Lead-Free7/29/04Document Number: 91180 www.vishay.com1IRFIBC30GPbFDocument Number: 91180 www.vishay.com2IRFIBC30GPbFDocument Number: 91180 www.vishay.com3IRFIBC30GPbFDocument Number: 91180 www.vishay.com4IRFIBC30GPbFDocument Number: 91180 www.vishay.com5IRFIBC30GPbFDocument Number: 91180 www.vishay.com6IRFIBC30GPbFPeak

PD - 94444SMPS MOSFETIRFIB8N50KHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Switch Mode Power Supply (SMPS)l UninterruptIble Power Supply 500V 290m 6.7Al High Speed Power SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andTO-220FULL-PAKAv

PD- 95649IRFIBE30GPbF Lead-Free7/26/04Document Number: 91184 www.vishay.com1IRFIBE30GPbFDocument Number: 91184 www.vishay.com2IRFIBE30GPbFDocument Number: 91184 www.vishay.com3IRFIBE30GPbFDocument Number: 91184 www.vishay.com4IRFIBE30GPbFDocument Number: 91184 www.vishay.com5IRFIBE30GPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Consi

PD-94837SMPS MOSFETIRFIB5N65APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 650V 0.93 5.1Al High Speed Power Switchingl High Voltage Isolation = 2.5KVRMSl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt RuggednessG D S

PD- 95648IRFIBE20GPbF Lead-Free7/26/04Document Number: 91183 www.vishay.com1IRFIBE20GPbFDocument Number: 91183 www.vishay.com2IRFIBE20GPbFDocument Number: 91183 www.vishay.com3IRFIBE20GPbFDocument Number: 91183 www.vishay.com4IRFIBE20GPbFDocument Number: 91183 www.vishay.com5IRFIBE20GPbFDocument Number: 91183 www.vishay.com6IRFIBE20GPbFPeak D

PD - 95390IRFIB5N50LPbFSMPS MOSFETHEXFET Power MOSFETApplications Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies500V 0.67 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

PD- 95650IRFIBF20GPbF Lead-Free7/26/04Document Number: 91185 www.vishay.com1IRFIBF20GPbFDocument Number: 91185 www.vishay.com2IRFIBF20GPbFDocument Number: 91185 www.vishay.com3IRFIBF20GPbFDocument Number: 91185 www.vishay.com4IRFIBF20GPbFDocument Number: 91185 www.vishay.com5IRFIBF20GPbFDocument Number: 91185 www.vishay.com6IRFIBF20GPbFPeak D

PD - 91810SMPS MOSFET IRFIB7N50AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capaci

IRFIB7N50A, SiHFIB7N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dtRoHS*COMPLIANTRuggednessQg (Max.) (nC) 52 Fully Characterized Capacitance andQgs (nC) 13Avalanche Voltage and CurrentQgd (nC) 18 E

IRFIBE20G, SiHFIBE20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 6.5f = 60 Hz)RoHS*Qg (Max.) (nC) 38COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.0 Dynamic dV/dt RatingQgd (nC) 21 Low Thermal ResistanceConfiguration

IRFIBF30G, SiHFIBF30GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.7RoHS*f = 60 Hz)Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 42 Low Thermal ResistanceConfiguration Sin

IRFIBE30G, SiHFIBE30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 800Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 3.0f = 60 Hz)RoHS*Qg (Max.) (nC) 78COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.6 Dynamic dV/dt RatingQgd (nC) 45 Low Thermal ResistanceConfiguration

IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration

IRFIB7N50L, SiHFIB7N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsRoHSRDS(on) ()VGS = 10 V 0.320 Lower Gate Charge Results in Simpler Drive COMPLIANT Qg (Max.) (nC) 92ReqirementsQgs (nC) 24 Enhanced dV/dt Capabilities Offer ImprovedQgd (nC) 44Ruggedness

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

IRFIBF20G, SiHFIBF20GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 900Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 8.0RoHS*f = 60 Hz)COMPLIANTQg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 4.7 Low Thermal ResistanceQgd (nC) 21 Lead (Pb)-free AvailableConfiguration SingleDESCRIPT

IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-

IRFIB5N65A, SiHFIB5N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 0.93RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19

IRFIB5N50L, SiHFIB5N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsRoHSRDS(on) ()VGS = 10 V 0.67COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 45ReqirementsQgs (nC) 13Qgd (nC) 23 Enhanced dV/dt Capabilities Offer Improved Ruggedness

IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

iscN-Channel MOSFET Transistor IRFIBC20GFEATURESLow drain-source on-resistance:RDS(ON) = 4.4 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

iscN-Channel MOSFET Transistor IRFIBC40GLCFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

iscN-Channel MOSFET Transistor IRFIBE20GFEATURESLow drain-source on-resistance:RDS(ON) =6.5 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

iscN-Channel MOSFET Transistor IRFIBC40GFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

iscN-Channel MOSFET Transistor IRFIB5N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

iscN-Channel MOSFET Transistor IRFIBC30GFEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFIB41N15DFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

iscN-Channel MOSFET Transistor IRFIBE30GFEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

iscN-Channel MOSFET Transistor IRFIB7N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.52 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL