IRFIB7N50A - описание и поиск аналогов

 ..1. Size:197K  international rectifier
 irfib7n50apbf.pdf 

PD - 94805 SMPS MOSFET IRFIB7N50APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S Ful

 ..2. Size:96K  international rectifier
 irfib7n50a.pdf 

PD - 91810 SMPS MOSFET IRFIB7N50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.52 6.6A High speed power switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capaci

 ..3. Size:143K  vishay
 irfib7n50a sihfib7n50a.pdf 

IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness Qg (Max.) (nC) 52 Fully Characterized Capacitance and Qgs (nC) 13 Avalanche Voltage and Current Qgd (nC) 18 E

 ..4. Size:274K  inchange semiconductor
 irfib7n50a.pdf 

iscN-Channel MOSFET Transistor IRFIB7N50A FEATURES Low drain-source on-resistance RDS(ON) =0.52 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 5.1. Size:219K  international rectifier
 irfib7n50lpbf.pdf 

PD - 95750 IRFIB7N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Trr typ. Zero Voltage Switching SMPS VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 320m 85ns 6.8A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 5.2. Size:871K  vishay
 irfib7n50lpbf.pdf 

IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications RoHS RDS(on) ( )VGS = 10 V 0.320 Lower Gate Charge Results in Simpler Drive COMPLIANT Qg (Max.) (nC) 92 Reqirements Qgs (nC) 24 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 44 Ruggedness

 9.1. Size:904K  international rectifier
 irfibc20g.pdf 

PD - 94856 IRFIBC20GPbF Lead-Free 11/20/03 Document Number 91178 www.vishay.com 1 IRFIBC20GPbF Document Number 91178 www.vishay.com 2 IRFIBC20GPbF Document Number 91178 www.vishay.com 3 IRFIBC20GPbF Document Number 91178 www.vishay.com 4 IRFIBC20GPbF Document Number 91178 www.vishay.com 5 IRFIBC20GPbF Document Number 91178 www.vishay.com 6 IRFIBC20GPbF TO-2

 9.2. Size:229K  international rectifier
 irfibc40glc.pdf 

 9.3. Size:517K  international rectifier
 irfib5n50l.pdf 

PD - 94522 SMPS MOSFET IRFIB5N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID l Switch Mode Power Supply (SMPS) 500V 0.67 73ns 4.7A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness TO-220 Full-Pak l Fully Chara

 9.4. Size:168K  international rectifier
 irfibe20g.pdf 

 9.5. Size:907K  international rectifier
 irfibf30g.pdf 

PD - 94874 IRFIBF30GPbF Lead-Free 12/9/03 Document Number 91186 www.vishay.com 1 IRFIBF30GPbF Document Number 91186 www.vishay.com 2 IRFIBF30GPbF Document Number 91186 www.vishay.com 3 IRFIBF30GPbF Document Number 91186 www.vishay.com 4 IRFIBF30GPbF Document Number 91186 www.vishay.com 5 IRFIBF30GPbF Document Number 91186 www.vishay.com 6 IRFIBF30GPbF TO-22

 9.6. Size:149K  international rectifier
 irfib6n60a.pdf 

PD - 91813 SMPS MOSFET IRFIB6N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75W 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized

 9.7. Size:912K  international rectifier
 irfibc40g.pdf 

PD - 94857 IRFIBC40GPbF Lead-Free 11/20/03 Document Number 91182 www.vishay.com 1 IRFIBC40GPbF Document Number 91182 www.vishay.com 2 IRFIBC40GPbF Document Number 91182 www.vishay.com 3 IRFIBC40GPbF Document Number 91182 www.vishay.com 4 IRFIBC40GPbF Document Number 91182 www.vishay.com 5 IRFIBC40GPbF Document Number 91182 www.vishay.com 6 IRFIBC40GPbF TO-

 9.8. Size:993K  international rectifier
 irfibc40glcpbf.pdf 

PD - 94860 IRFIBC40GLCPbF Lead-Free 12/03/03 Document Number 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 4 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 5 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 6 IRFIBC

 9.9. Size:337K  international rectifier
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf.pdf 

PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID Benefits 150V 0.045 41A l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avala

 9.10. Size:103K  international rectifier
 irfib5n65a.pdf 

PD-91816B SMPS MOSFET IRFIB5N65A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 5.1A High Speed Power Switching High Voltage Isolation = 2.5KVRMS Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacita

 9.11. Size:284K  international rectifier
 irfibc30g.pdf 

PD - 95611 IRFIBC30GPbF Lead-Free 7/29/04 Document Number 91180 www.vishay.com 1 IRFIBC30GPbF Document Number 91180 www.vishay.com 2 IRFIBC30GPbF Document Number 91180 www.vishay.com 3 IRFIBC30GPbF Document Number 91180 www.vishay.com 4 IRFIBC30GPbF Document Number 91180 www.vishay.com 5 IRFIBC30GPbF Document Number 91180 www.vishay.com 6 IRFIBC30GPbF Peak

 9.12. Size:137K  international rectifier
 irfib8n50k.pdf 

PD - 94444 SMPS MOSFET IRFIB8N50K HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 290m 6.7A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and TO-220 FULL-PAK Av

 9.13. Size:867K  international rectifier
 irfibe30g.pdf 

PD- 95649 IRFIBE30GPbF Lead-Free 7/26/04 Document Number 91184 www.vishay.com 1 IRFIBE30GPbF Document Number 91184 www.vishay.com 2 IRFIBE30GPbF Document Number 91184 www.vishay.com 3 IRFIBE30GPbF Document Number 91184 www.vishay.com 4 IRFIBE30GPbF Document Number 91184 www.vishay.com 5 IRFIBE30GPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Consi

 9.14. Size:235K  international rectifier
 irfib5n65apbf.pdf 

PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 650V 0.93 5.1A l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness G D S

 9.15. Size:972K  international rectifier
 irfibe20gpbf.pdf 

PD- 95648 IRFIBE20GPbF Lead-Free 7/26/04 Document Number 91183 www.vishay.com 1 IRFIBE20GPbF Document Number 91183 www.vishay.com 2 IRFIBE20GPbF Document Number 91183 www.vishay.com 3 IRFIBE20GPbF Document Number 91183 www.vishay.com 4 IRFIBE20GPbF Document Number 91183 www.vishay.com 5 IRFIBE20GPbF Document Number 91183 www.vishay.com 6 IRFIBE20GPbF Peak D

 9.16. Size:168K  international rectifier
 irfibf20g.pdf 

 9.17. Size:197K  international rectifier
 irfib5n50lpbf.pdf 

PD - 95390 IRFIB5N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 0.67 73ns 4.7A Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 9.18. Size:198K  international rectifier
 irfib6n60apbf.pdf 

PD - 94838 SMPS MOSFET IRFIB6N60APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75 5.5A l High speed power switching l High Voltage Isolation = 2.5KVRMS l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G

 9.19. Size:1034K  international rectifier
 irfibf20gpbf.pdf 

PD- 95650 IRFIBF20GPbF Lead-Free 7/26/04 Document Number 91185 www.vishay.com 1 IRFIBF20GPbF Document Number 91185 www.vishay.com 2 IRFIBF20GPbF Document Number 91185 www.vishay.com 3 IRFIBF20GPbF Document Number 91185 www.vishay.com 4 IRFIBF20GPbF Document Number 91185 www.vishay.com 5 IRFIBF20GPbF Document Number 91185 www.vishay.com 6 IRFIBF20GPbF Peak D

 9.20. Size:1534K  vishay
 irfibe20g sihfibe20g.pdf 

IRFIBE20G, SiHFIBE20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 6.5 f = 60 Hz) RoHS* Qg (Max.) (nC) 38 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 5.0 Dynamic dV/dt Rating Qgd (nC) 21 Low Thermal Resistance Configuration

 9.21. Size:1451K  vishay
 irfibf30g sihfibf30g.pdf 

IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.7 RoHS* f = 60 Hz) Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 42 Low Thermal Resistance Configuration Sin

 9.22. Size:1395K  vishay
 irfibe30g sihfibe30g.pdf 

IRFIBE30G, SiHFIBE30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 800 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 3.0 f = 60 Hz) RoHS* Qg (Max.) (nC) 78 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 9.6 Dynamic dV/dt Rating Qgd (nC) 45 Low Thermal Resistance Configuration

 9.23. Size:1462K  vishay
 irfibc20g sihfibc20g.pdf 

IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 4.4 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 8.9 Low Thermal Resistance Configuration

 9.24. Size:139K  vishay
 irfib6n60a sihfib6n60a.pdf 

IRFIB6N60A, SiHFIB6N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Requirement Available RDS(on) ( )VGS = 10 V 0.75 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 49 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 20 Avalanche Voltage and Current Confi

 9.25. Size:1601K  vishay
 irfibc40glc sihfibc40glc.pdf 

IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati

 9.26. Size:1441K  vishay
 irfibc40g sihfibc40g.pdf 

IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing

 9.27. Size:1680K  vishay
 irfibf20g sihfibf20g.pdf 

IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 900 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 8.0 RoHS* f = 60 Hz) COMPLIANT Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 4.7 Low Thermal Resistance Qgd (nC) 21 Lead (Pb)-free Available Configuration Single DESCRIPT

 9.28. Size:923K  vishay
 irfibc30g sihfibc30g.pdf 

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-

 9.29. Size:141K  vishay
 irfib5n65a sihfib5n65a.pdf 

IRFIB5N65A, SiHFIB5N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 0.93 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19

 9.30. Size:806K  vishay
 irfib5n50lpbf.pdf 

IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications RoHS RDS(on) ( )VGS = 10 V 0.67 COMPLIANT Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 45 Reqirements Qgs (nC) 13 Qgd (nC) 23 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.31. Size:928K  vishay
 irfibc30gpbf.pdf 

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-

 9.32. Size:708K  infineon
 irfb41n15dpbf irfib41n15dpbf irfs41n15dpbf irfsl41n15dpbf.pdf 

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS 150V Benefits RDS(on) max 0.045 Low Gate-to-Drain Charge to Reduce Switching Losses ID 41A Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. D D Note AN1001) Fully Characteri

 9.33. Size:275K  inchange semiconductor
 irfibc20g.pdf 

iscN-Channel MOSFET Transistor IRFIBC20G FEATURES Low drain-source on-resistance RDS(ON) = 4.4 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.34. Size:275K  inchange semiconductor
 irfibc40glc.pdf 

iscN-Channel MOSFET Transistor IRFIBC40GLC FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.35. Size:275K  inchange semiconductor
 irfibe20g.pdf 

iscN-Channel MOSFET Transistor IRFIBE20G FEATURES Low drain-source on-resistance RDS(ON) =6.5 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.36. Size:275K  inchange semiconductor
 irfib6n60a.pdf 

iscN-Channel MOSFET Transistor IRFIB6N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.37. Size:275K  inchange semiconductor
 irfibc40g.pdf 

iscN-Channel MOSFET Transistor IRFIBC40G FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 9.38. Size:274K  inchange semiconductor
 irfib5n65a.pdf 

iscN-Channel MOSFET Transistor IRFIB5N65A FEATURES Low drain-source on-resistance RDS(ON) =0.93 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.39. Size:275K  inchange semiconductor
 irfibc30g.pdf 

iscN-Channel MOSFET Transistor IRFIBC30G FEATURES Low drain-source on-resistance RDS(ON) =2.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.40. Size:201K  inchange semiconductor
 irfib41n15d.pdf 

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFIB41N15D FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 9.41. Size:275K  inchange semiconductor
 irfibe30g.pdf 

iscN-Channel MOSFET Transistor IRFIBE30G FEATURES Low drain-source on-resistance RDS(ON) =3.0 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI