PD - 94856IRFIBC20GPbF Lead-Free11/20/03Document Number: 91178 www.vishay.com1IRFIBC20GPbFDocument Number: 91178 www.vishay.com2IRFIBC20GPbFDocument Number: 91178 www.vishay.com3IRFIBC20GPbFDocument Number: 91178 www.vishay.com4IRFIBC20GPbFDocument Number: 91178 www.vishay.com5IRFIBC20GPbFDocument Number: 91178 www.vishay.com6IRFIBC20GPbFTO-2

IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration

iscN-Channel MOSFET Transistor IRFIBC20GFEATURESLow drain-source on-resistance:RDS(ON) = 4.4 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

PD - 94857IRFIBC40GPbF Lead-Free11/20/03Document Number: 91182 www.vishay.com1IRFIBC40GPbFDocument Number: 91182 www.vishay.com2IRFIBC40GPbFDocument Number: 91182 www.vishay.com3IRFIBC40GPbFDocument Number: 91182 www.vishay.com4IRFIBC40GPbFDocument Number: 91182 www.vishay.com5IRFIBC40GPbFDocument Number: 91182 www.vishay.com6IRFIBC40GPbFTO-

PD - 94860IRFIBC40GLCPbF Lead-Free12/03/03Document Number: 91181 www.vishay.com1IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com2IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com3IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com4IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com5IRFIBC40GLCPbFDocument Number: 91181 www.vishay.com6IRFIBC

PD - 95611IRFIBC30GPbF Lead-Free7/29/04Document Number: 91180 www.vishay.com1IRFIBC30GPbFDocument Number: 91180 www.vishay.com2IRFIBC30GPbFDocument Number: 91180 www.vishay.com3IRFIBC30GPbFDocument Number: 91180 www.vishay.com4IRFIBC30GPbFDocument Number: 91180 www.vishay.com5IRFIBC30GPbFDocument Number: 91180 www.vishay.com6IRFIBC30GPbFPeak

IRFIBC40GLC, SiHFIBC40GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 1.2f = 60 Hz)RoHS*Qg (Max.) (nC) 39COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 19 Low Thermal ResistanceConfigurati

IRFIBC40G, SiHFIBC40GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available Low Thermal ResistanceRDS(on) ()VGS = 10 V 1.2RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 8.3f = 60 Hz)Qgd (nC) 30 Dynamic dV/dt RatingConfiguration Sing

IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-

IRFIBC30G, SiHFIBC30GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 2.2f = 60 Hz)RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 31 Dynamic dV/dt RatingQgs (nC) 4.6 Low Thermal ResistanceQgd (nC) 17 Lead (Pb)-

iscN-Channel MOSFET Transistor IRFIBC40GLCFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

iscN-Channel MOSFET Transistor IRFIBC40GFEATURESLow drain-source on-resistance:RDS(ON) = 1.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

iscN-Channel MOSFET Transistor IRFIBC30GFEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI