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IRFIBC20G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFIBC20G

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 30 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 1.7 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 18 nC

Сопротивление сток-исток открытого транзистора (Rds): 4.4 Ohm

Тип корпуса: TO220

Аналог (замена) для IRFIBC20G

 

 

IRFIBC20G Datasheet (PDF)

1.1. irfibc20g.pdf Size:904K _international_rectifier

IRFIBC20G
IRFIBC20G

PD - 94856 IRFIBC20GPbF Lead-Free 11/20/03 Document Number: 91178 www.vishay.com 1 IRFIBC20GPbF Document Number: 91178 www.vishay.com 2 IRFIBC20GPbF Document Number: 91178 www.vishay.com 3 IRFIBC20GPbF Document Number: 91178 www.vishay.com 4 IRFIBC20GPbF Document Number: 91178 www.vishay.com 5 IRFIBC20GPbF Document Number: 91178 www.vishay.com 6 IRFIBC20GPbF TO-220 Fu

1.2. irfibc20g sihfibc20g.pdf Size:1462K _vishay

IRFIBC20G
IRFIBC20G

IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 4.4 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 8.9 Low Thermal Resistance Configuration Single Lea

 4.1. irfibc30gpbf.pdf Size:928K _upd

IRFIBC20G
IRFIBC20G

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 600 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 • Dynamic dV/dt Rating Qgs (nC) 4.6 • Low Thermal Resistance Qgd (nC) 17 • Lead (Pb)-

4.2. irfibc40glc.pdf Size:229K _international_rectifier

IRFIBC20G
IRFIBC20G

 4.3. irfibc40g.pdf Size:912K _international_rectifier

IRFIBC20G
IRFIBC20G

PD - 94857 IRFIBC40GPbF Lead-Free 11/20/03 Document Number: 91182 www.vishay.com 1 IRFIBC40GPbF Document Number: 91182 www.vishay.com 2 IRFIBC40GPbF Document Number: 91182 www.vishay.com 3 IRFIBC40GPbF Document Number: 91182 www.vishay.com 4 IRFIBC40GPbF Document Number: 91182 www.vishay.com 5 IRFIBC40GPbF Document Number: 91182 www.vishay.com 6 IRFIBC40GPbF TO-220 F

4.4. irfibc40glcpbf.pdf Size:993K _international_rectifier

IRFIBC20G
IRFIBC20G

PD - 94860 IRFIBC40GLCPbF Lead-Free 12/03/03 Document Number: 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 4 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 5 IRFIBC40GLCPbF Document Number: 91181 www.vishay.com 6 IRFIBC40GLC

 4.5. irfibc30g.pdf Size:284K _international_rectifier

IRFIBC20G
IRFIBC20G

PD - 95611 IRFIBC30GPbF Lead-Free 7/29/04 Document Number: 91180 www.vishay.com 1 IRFIBC30GPbF Document Number: 91180 www.vishay.com 2 IRFIBC30GPbF Document Number: 91180 www.vishay.com 3 IRFIBC30GPbF Document Number: 91180 www.vishay.com 4 IRFIBC30GPbF Document Number: 91180 www.vishay.com 5 IRFIBC30GPbF Document Number: 91180 www.vishay.com 6 IRFIBC30GPbF Peak Diode

4.6. irfibc30g sihfibc30g.pdf Size:923K _vishay

IRFIBC20G
IRFIBC20G

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-free Available

4.7. irfibc40g sihfibc40g.pdf Size:1441K _vishay

IRFIBC20G
IRFIBC20G

IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) (?)VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Single Lead (Pb

4.8. irfibc40glc sihfibc40glc.pdf Size:1601K _vishay

IRFIBC20G
IRFIBC20G

IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configuration Single L

Другие MOSFET... IRFI9630G , IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A , IRFIB7N50A , IRF840 , IRFIBC30G , IRFIBC40G , IRFIBC40GLC , IRFIBE20G , IRFIBE30G , IRFIBF20G , IRFIBF30G , IRFIZ14A .

 

 
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MOSFET: CMB1405 | CMP1405 | JCS4N60F | JCS4N60C | JCS4N60B | JCS4N60S | JCS4N60R | JCS4N60V | MDU2657 | OSG55R190PF | OSG55R190FF | OSG55R190DF | OSG55R190AF | PTP04N04N | RU7088R3 |
 

 

 

 

 

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