IRFIBC20G - описание и поиск аналогов

PD - 94856 IRFIBC20GPbF Lead-Free 11/20/03 Document Number 91178 www.vishay.com 1 IRFIBC20GPbF Document Number 91178 www.vishay.com 2 IRFIBC20GPbF Document Number 91178 www.vishay.com 3 IRFIBC20GPbF Document Number 91178 www.vishay.com 4 IRFIBC20GPbF Document Number 91178 www.vishay.com 5 IRFIBC20GPbF Document Number 91178 www.vishay.com 6 IRFIBC20GPbF TO-2

IRFIBC20G, SiHFIBC20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 4.4 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 3.0 Dynamic dV/dt Rating Qgd (nC) 8.9 Low Thermal Resistance Configuration

iscN-Channel MOSFET Transistor IRFIBC20G FEATURES Low drain-source on-resistance RDS(ON) = 4.4 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

PD - 94857 IRFIBC40GPbF Lead-Free 11/20/03 Document Number 91182 www.vishay.com 1 IRFIBC40GPbF Document Number 91182 www.vishay.com 2 IRFIBC40GPbF Document Number 91182 www.vishay.com 3 IRFIBC40GPbF Document Number 91182 www.vishay.com 4 IRFIBC40GPbF Document Number 91182 www.vishay.com 5 IRFIBC40GPbF Document Number 91182 www.vishay.com 6 IRFIBC40GPbF TO-

PD - 94860 IRFIBC40GLCPbF Lead-Free 12/03/03 Document Number 91181 www.vishay.com 1 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 2 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 3 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 4 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 5 IRFIBC40GLCPbF Document Number 91181 www.vishay.com 6 IRFIBC

PD - 95611 IRFIBC30GPbF Lead-Free 7/29/04 Document Number 91180 www.vishay.com 1 IRFIBC30GPbF Document Number 91180 www.vishay.com 2 IRFIBC30GPbF Document Number 91180 www.vishay.com 3 IRFIBC30GPbF Document Number 91180 www.vishay.com 4 IRFIBC30GPbF Document Number 91180 www.vishay.com 5 IRFIBC30GPbF Document Number 91180 www.vishay.com 6 IRFIBC30GPbF Peak

IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 1.2 f = 60 Hz) RoHS* Qg (Max.) (nC) 39 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 19 Low Thermal Resistance Configurati

IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available Low Thermal Resistance RDS(on) ( )VGS = 10 V 1.2 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 60 COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s, Qgs (nC) 8.3 f = 60 Hz) Qgd (nC) 30 Dynamic dV/dt Rating Configuration Sing

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-

IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 600 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 2.2 f = 60 Hz) RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 31 Dynamic dV/dt Rating Qgs (nC) 4.6 Low Thermal Resistance Qgd (nC) 17 Lead (Pb)-

iscN-Channel MOSFET Transistor IRFIBC40GLC FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

iscN-Channel MOSFET Transistor IRFIBC40G FEATURES Low drain-source on-resistance RDS(ON) = 1.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

iscN-Channel MOSFET Transistor IRFIBC30G FEATURES Low drain-source on-resistance RDS(ON) =2.2 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI