AP9578GJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP9578GJ
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 28 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 10 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 10 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 80 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.16 Ohm
Тип корпуса: TO251
AP9578GJ Datasheet (PDF)
ap9578gh ap9578gj.pdf
AP9578GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrialSTO-252(H)surface mount applications and suited for low volt
ap9578gh.pdf
AP9578GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionAP9578 series are from Advanced Power innovated design andGDSsilicon process technology to achieve the lowest possible on-TO-252(H)
ap9578gs.pdf
AP9578GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-263(S)ruggedized device d
ap9578gi-hf.pdf
AP9578GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -9AG Halogen Free & RoHS CompliantSDescriptionAP9578 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p
ap9578gp.pdf
AP9578GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionThe Advanced Power MOSFETs from APEC provide the designer withGDthe best combination of fast switching, ruggedized device design, low
ap9578gm.pdf
AP9578GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS -60VDDD Simple Drive Requirement RDS(ON) 170mD Fast Switching Characteristic ID -3AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designerwith the best combination of fast switching, ruggedized device
ap9578gh j-hf.pdf
AP9578GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -60V Simple Drive Requirement RDS(ON) 160m Fast Switching Characteristic ID -10AGSDescriptionThe TO-252 package is widely preferred for all commercial-industrial GDSsurface mount applications and suited for low voltage applica
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