AP60T10GP-HF. Аналоги и основные параметры
Наименование производителя: AP60T10GP-HF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 167 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 67 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 68 ns
Cossⓘ - Выходная емкость: 400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: TO220
Аналог (замена) для AP60T10GP-HF
- подборⓘ MOSFET транзистора по параметрам
AP60T10GP-HF даташит
ap60t10gp-hf ap60t10gs-hf.pdf
AP60T10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resi
ap60t10gp ap60t10gs.pdf
AP60T10GS/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m Fast Switching Characteristic ID 67A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220(P) ruggedized device design,
ap60t10gi-hf.pdf
AP60T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 34A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-res
nceap60t15g.pdf
http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R
Другие IGBT... AP96T07AGP-HF, AP98T03GP, AP98T06GP-HF, AP60L02GJ, AP60T03AH, AP60T03AJ, AP60T03AS, AP60T03GJ, STP80NF70, AP60T10GS-HF, AP60U02GH, AP60U03GH, AP62T02GJ, AP9410GM-HF, AP9412AGM, AP9412BGM, AP9435GJ-HF
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