Справочник MOSFET. AP9450GMT-HF

 

AP9450GMT-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9450GMT-HF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 32 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 11 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0031 Ohm
   Тип корпуса: PMPAK5X6

 Аналог (замена) для AP9450GMT-HF

 

 

AP9450GMT-HF Datasheet (PDF)

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 ap9450gmt-hf.pdf

AP9450GMT-HF AP9450GMT-HF

AP9450GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.1m Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeS DDDDescriptionDAP9450 series are from Advanced Power innovated design and siliconprocess technology to achieve

 7.1. Size:91K  ape
 ap9450gyt-hf.pdf

AP9450GMT-HF AP9450GMT-HF

AP9450GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 2.8m RoHS Compliant & Halogen-Free ID 50AGDSDDDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device desi

 9.1. Size:59K  ape
 ap9451gg-hf.pdf

AP9450GMT-HF AP9450GMT-HF

AP9451GG-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 135m Capable of 2.5V Gate Drive ID - 2.3AG RoHS Compliant & Halogen-Free SDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugg

 9.2. Size:127K  ape
 ap9451gg.pdf

AP9450GMT-HF AP9450GMT-HF

AP9451GG-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 135m Capable of 2.5V Gate Drive ID - 2.3AG RoHS Compliant & Halogen-Free SDDescriptionAP9451 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

 9.3. Size:93K  ape
 ap9452agg-hf.pdf

AP9450GMT-HF AP9450GMT-HF

AP9452AGG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Single Drive Requirement ID 4AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide theSdesigner with the best combination of fast switching,DSOT-

 9.4. Size:164K  ape
 ap9452gg.pdf

AP9450GMT-HF AP9450GMT-HF

AP9452GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 20VD Capable of 2.5V Gate Drive RDS(ON) 50m Simple Drive Requirement ID 4AG RoHS CompliantSDescriptionAP9452 series are from Advanced Power innovated design andDsilicon process technology to achieve the lowest possible on-res

 9.5. Size:90K  ape
 ap9452gg-hf.pdf

AP9450GMT-HF AP9450GMT-HF

AP9452GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower gate charge BVDSS 20VD Capable of 2.5V gate drive RDS(ON) 50m Single Drive Requirement ID 4AG RoHS CompliantSDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

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