Справочник MOSFET. AP9561GM-HF

 

AP9561GM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP9561GM-HF
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 360 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SO8

 Аналог (замена) для AP9561GM-HF

 

 

AP9561GM-HF Datasheet (PDF)

 ..1. Size:93K  ape
ap9561gm-hf.pdf

AP9561GM-HF
AP9561GM-HF

AP9561GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 6.1. Size:216K  ape
ap9561gm.pdf

AP9561GM-HF
AP9561GM-HF

AP9561GMRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -40VDDD Lower Gate Charge RDS(ON) 18mD Fast Switching Characteristic ID -9.4AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device des

 7.1. Size:93K  ape
ap9561gp-hf.pdf

AP9561GM-HF
AP9561GM-HF

AP9561GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device des

 7.2. Size:201K  ape
ap9561gj.pdf

AP9561GM-HF
AP9561GM-HF

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance D BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAP9561 series are from Advanced Power innovated design and siliconGDprocess technology to achieve th

 7.3. Size:93K  ape
ap9561gi-hf.pdf

AP9561GM-HF
AP9561GM-HF

AP9561GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -36AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

 7.4. Size:96K  ape
ap9561gh-hf ap9561gj-hf.pdf

AP9561GM-HF
AP9561GM-HF

AP9561GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 16m Fast Switching Characteristic ID -45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

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