Справочник MOSFET. IRF3205ZLPBF

 

IRF3205ZLPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF3205ZLPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 95 ns
   Cossⓘ - Выходная емкость: 550 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: TO262

 Аналог (замена) для IRF3205ZLPBF

 

 

IRF3205ZLPBF Datasheet (PDF)

 ..1. Size:379K  international rectifier
irf3205zpbf irf3205zlpbf irf3205zspbf.pdf

IRF3205ZLPBF
IRF3205ZLPBF

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 ..2. Size:379K  infineon
irf3205zpbf irf3205zspbf irf3205zlpbf.pdf

IRF3205ZLPBF
IRF3205ZLPBF

PD - 95129AIRF3205ZPbFIRF3205ZSPbFIRF3205ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5ml Lead-FreeGDescriptionID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve e

 5.1. Size:303K  infineon
irf3205z irf3205zs irf3205zl.pdf

IRF3205ZLPBF
IRF3205ZLPBF

PD - 94653BIRF3205ZAUTOMOTIVE MOSFETIRF3205ZSIRF3205ZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 6.5mGDescriptionID = 75ASpecifically designed for Automotive applications,Sthis HEXFET Power MOS

 6.1. Size:330K  international rectifier
auirf3205zstrl.pdf

IRF3205ZLPBF
IRF3205ZLPBF

PD - 97542AUTOMOTIVE GRADEAUIRF3205ZAUIRF3205ZSFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast SwitchingRDS(on) max.6.5m Repetitive Avalanche Allowed up toTjmaxGID (Silicon Limited) 110A Lead-Free, RoHS CompliantS Automotive Qualified *ID (Package Li

 6.2. Size:181K  international rectifier
irf3205z.pdf

IRF3205ZLPBF
IRF3205ZLPBF

PD - 94653AUTOMOTIVE MOSFETIRF3205ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 6.5m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

 6.3. Size:707K  infineon
auirf3205z auirf3205zs.pdf

IRF3205ZLPBF
IRF3205ZLPBF

AUIRF3205Z AUTOMOTIVE GRADE AUIRF3205ZS HEXFET Power MOSFET Features VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) max. 6.5m 175C Operating Temperature ID (Silicon Limited) 110A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Automotive Qualified *

 6.4. Size:258K  inchange semiconductor
irf3205zs.pdf

IRF3205ZLPBF
IRF3205ZLPBF

Isc N-Channel MOSFET Transistor IRF3205ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 6.5. Size:246K  inchange semiconductor
irf3205z.pdf

IRF3205ZLPBF
IRF3205ZLPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3205ZIIRF3205ZFEATURESStatic drain-source on-resistance:RDS(on) 6.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

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