IRF3305PBF - аналоги, параметры транзистора - Справочник транзисторов

IRF3305PBF даташит

..1. Size:267K international rectifier
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PD - 95758A IRF3305PbF Features HEXFET Power MOSFET Designed to support Linear Gate Drive Applications D 175 C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and Design RDS(on) = 8.0m Fully Avalanche Rated G Lead-Free ID = 75A S Description This HEXFET Power MOSFET utilizes a rugged planar process technology and dev

7.1. Size:1364K infineon
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AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

7.2. Size:245K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3305 IIRF3305 FEATURES Static drain-source on-resistance RDS(on) 8.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

7.3. Size:331K inchange semiconductor
irf3305b.pdf pdf_icon

isc N-Channel MOSFET Transistor IRF3305B FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 55V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM R

Другие MOSFET... IRF3205PBF , IRF3205SPBF , IRF3205ZLPBF , IRF3205ZPBF , IRF3205ZSPBF , IRF321 , IRF322 , IRF323 , IRFB4115 , IRF330R , IRF331 , IRF331R , IRF332 , IRF332R , IRF333 , IRF333R , IRF3000 .