IRF330R - Даташиты. Аналоги. Основные параметры

PD - 95758AIRF3305PbFFeaturesHEXFET Power MOSFET Designed to support Linear Gate DriveApplications D 175C Operating Temperature VDSS = 55V Low Thermal Resistance Junction - Case Rugged Process Technology and DesignRDS(on) = 8.0m Fully Avalanche RatedG Lead-FreeID = 75ASDescriptionThis HEXFET Power MOSFET utilizes a ruggedplanar process technology and dev

PD - 90335FIRF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760HEXFETTRANSISTORS JANTXV2N6760THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF330 400V 1.00 5.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

AUTOMOTIVE GRADE AUIRF3305 Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance V(BR)DSS 55V 175C Operating Temperature Fast Switching RDS(on) max. 8.0m Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 140A Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically de

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3305IIRF3305FEATURESStatic drain-source on-resistance:RDS(on) 8.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

isc N-Channel MOSFET Transistor IRF3305BFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM R