IRF3007SPBF datasheet, подбор замены

 ..1. Size:323K  international rectifier
 irf3007spbf irf3007lpbf.pdf 

PD - 95494A IRF3007SPbF IRF3007LPbF Typical Applications l Industrial Motor Drive HEXFET Power MOSFET Features D VDSS = 75V l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching RDS(on) = 0.0126 G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 62A S Description This design of HEXFET Power MOSFETs utilizes the lastest processing technique

 6.1. Size:258K  inchange semiconductor
 irf3007s.pdf 

Isc N-Channel MOSFET Transistor IRF3007S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 7.1. Size:149K  international rectifier
 irf3007.pdf 

PD -94424A AUTOMOTIVE MOSFET IRF3007 Typical Applications HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Features VDSS = 75V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 0.0126 Fast Switching G Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified ID = 75A S Description Specifically designed for Autom

 7.2. Size:262K  international rectifier
 irf3007pbf.pdf 

PD -95618A IRF3007PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features VDSS = 75V l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) = 0.0126 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free ID = 75A S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve

 7.3. Size:615K  international rectifier
 auirf3007.pdf 

PD - 96417 AUTOMOTIVE GRADE AUIRF3007 HEXFET Power MOSFET Features D l Advanced Planar Technology V(BR)DSS 75V l Low On-Resistance RDS(on) typ. 10.5m l 175 C Operating Temperature max 12.6m l Fast Switching G ID (Silicon Limited) l Fully Avalanche Rated 80A l Repetitive Avalanche Allowed S ID (Package Limited) 75A up to Tjmax l Lead-Free, RoHS Compliant l Automotive

 7.4. Size:245K  inchange semiconductor
 irf3007.pdf 

isc N-Channel MOSFET Transistor IRF3007 IIRF3007 FEATURES Static drain-source on-resistance RDS(on) 12.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 7.5. Size:256K  inchange semiconductor
 irf3007l.pdf 

Isc N-Channel MOSFET Transistor IRF3007L FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75