Справочник MOSFET. IRF1503SPBF

 

IRF1503SPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF1503SPBF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 130 ns
   Cossⓘ - Выходная емкость: 2250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO263

 Аналог (замена) для IRF1503SPBF

 

 

IRF1503SPBF Datasheet (PDF)

 ..1. Size:330K  international rectifier
 irf1503lpbf irf1503spbf.pdf

IRF1503SPBF IRF1503SPBF

PD - 95432AIRF1503SPbFIRF1503LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VBenefitsl Advanced Process Technologyl Ultra Low On-Resistance RDS(on) = 3.3mGl 175C Operating Temperaturel Fast SwitchingID = 75Al Repetitive Avalanche Allowed up to TjmaxSDescriptionThis Stripe Planar design of HEXFET Power MOSFETsutilizes th

 6.1. Size:661K  international rectifier
 irf1503l irf1503s.pdf

IRF1503SPBF IRF1503SPBF

PD - 94494AIRF1503SIRF1503LTypical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VBenefits Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpecificall

 6.2. Size:203K  inchange semiconductor
 irf1503s.pdf

IRF1503SPBF IRF1503SPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

 7.1. Size:552K  international rectifier
 irf1503.pdf

IRF1503SPBF IRF1503SPBF

PD-94526AAUTOMOTIVE MOSFETIRF1503Typical ApplicationsHEXFET Power MOSFET 14V Automotive Electrical SystemsD 14V Electronic Power SteeringVDSS = 30VFeatures Advanced Process TechnologyRDS(on) = 3.3m Ultra Low On-ResistanceG 175C Operating Temperature Fast Switching ID = 75AS Repetitive Avalanche Allowed up to TjmaxDescriptionSpeci

 7.2. Size:268K  international rectifier
 irf1503pbf.pdf

IRF1503SPBF IRF1503SPBF

PD-95438AIRF1503PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 30VFeatures Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 3.3mG 175C Operating Temperature Fast SwitchingID = 75A Repetitive Avalanche Allowed up to TjmaxSDescriptionThis design of HEXFET Power MOSFETs utilizesthe lastest processing techniques to

 7.3. Size:245K  inchange semiconductor
 irf1503.pdf

IRF1503SPBF IRF1503SPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1503 IIRF1503FEATURESStatic drain-source on-resistance:RDS(on) 3.3mEnhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=250A)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide v

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