IRF150SMD - описание и поиск аналогов

IRF150SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFET TRANSISTORS JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF MIL-PRF-19500/543] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055 38A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3m G l 175 C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET Power MOSFETs utilizes th

PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET Power MOSFET 14V Automotive Electrical Systems D 14V Electronic Power Steering VDSS = 30V Features Advanced Process Technology RDS(on) = 3.3m Ultra Low On-Resistance G 175 C Operating Temperature Fast Switching ID = 75A S Repetitive Avalanche Allowed up to Tjmax Description Speci

PD - 94494A IRF1503S IRF1503L Typical Applications HEXFET Power MOSFET 14V Automotive Electrical Systems D 14V Electronic Power Steering VDSS = 30V Benefits Advanced Process Technology RDS(on) = 3.3m Ultra Low On-Resistance G 175 C Operating Temperature Fast Switching ID = 75A S Repetitive Avalanche Allowed up to Tjmax Description Specificall

PD-95438A IRF1503PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3m G 175 C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to

IRF150P220 MOSFET PG-TO 247-3 StrongIRFET Features Very low R DS(on) Excellent gate charge x R (FOM) DS(on) Optimized Q rr 175 C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 1 2 3 Benefits Reduced conduction losses Ideal for high switching frequency Drain

IRF150P221 MOSFET PG-TO 247-3 StrongIRFET Features Very low R DS(on) Excellent gate charge x R (FOM) DS(on) Optimized Q rr 175 C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 1 2 3 Benefits Reduced conduction losses Ideal for high switching frequency Drain

RoHS IRF150 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION D The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF150 DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R =0.055 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503 IIRF1503 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=250 A) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide v