Справочник MOSFET. IRFL4315PBF

 

IRFL4315PBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFL4315PBF
   Маркировка: FL4315
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.185 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для IRFL4315PBF

 

 

IRFL4315PBF Datasheet (PDF)

 ..1. Size:197K  international rectifier
 irfl4315pbf.pdf

IRFL4315PBF IRFL4315PBF

PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs

 ..2. Size:197K  infineon
 irfl4315pbf.pdf

IRFL4315PBF IRFL4315PBF

PD - 95258AIRFL4315PbFHEXFET Power MOSFETVDSS RDS(on) max IDApplicationsl High frequency DC-DC converters150V 185mW@VGS = 10V 2.6ABenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223l Fully Characterized Avalanche Voltageand Currentl Lead-FreeAbs

 6.1. Size:121K  international rectifier
 irfl4315.pdf

IRFL4315PBF IRFL4315PBF

PD - 94445IRFL4315SMPS MOSFETHEXFET Power MOSFETVDSS RDS(on) max IDApplications High frequency DC-DC converters150V 185m@VGS = 10V 2.6ABenefits Low Gate to Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (SeeApp. Note AN1001)SOT-223 Fully Characterized Avalanche Voltagean

 7.1. Size:659K  international rectifier
 irfl4310pbf.pdf

IRFL4315PBF IRFL4315PBF

PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

 7.2. Size:313K  international rectifier
 irfl4310.pdf

IRFL4315PBF IRFL4315PBF

PD - 91368BIRFL4310HEXFET Power MOSFETDVDSS = 100Vl Surface Mountl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.20Wl Ease of ParallelingGl Advanced Process Technologyl Ultra Low On-ResistanceID = 1.6ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon ar

 7.3. Size:662K  infineon
 irfl4310pbf.pdf

IRFL4315PBF IRFL4315PBF

PD - 95144IRFL4310PbFHEXFET Power MOSFETD Surface MountVDSS = 100V Dynamic dv/dt Rating Fast Switching Ease of ParallelingRDS(on) = 0.20 Advanced Process TechnologyG Ultra Low On-ResistanceID = 1.6A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

 7.4. Size:2332K  cn vbsemi
 irfl4310tr.pdf

IRFL4315PBF IRFL4315PBF

IRFL4310TRwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 30 AEC-Q101 QualifiedcRDS(on) () at VGS = 10 V 0.019 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.021ID (A) 7Configuration SingleDSOT-223GDSDGSN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PA

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